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Other articles related with "electron accumulation layer":
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48502 |
Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰) |
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Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer |
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Chin. Phys. B
2016 Vol.25 (4): 48502-048502
[Abstract]
(748)
[HTML 1 KB]
[PDF 788 KB]
(384)
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